t4 - lds - 0230, rev . 1 (111 901 ) ?2011 microsemi corporation page 1 of 6 1n5550 thru 1n5554 available on commercial versions voidless herm e tically sealed standard recovery glass rectifiers qualified to mil -prf- 19500/420 qualified levels : jan, jantx, jantxv and jans des cription this standard recovery rectifier diode series is military qualified and i s ideal for high - reliability applications where a failure cannot be tolerated. these industry - recognized 5.0 a mp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermeticall y sealed with voidless - glass construction using an internal category 1 metallurgical bond. these devices are also available in surface mount melf package configurations. mic rosemi also offers numerous other rectifier products to meet higher and lower current rating s with various recovery time speed requirements including fast and ultrafast device types in b oth through - hole and surface mount packages. b package also available in : b sq - melf (d- 5b ) package (surfa ce mount) 1n5550us C 1n5554us important: for the latest information, visit our website http://www.microsemi.com . features ? jedec registered 1n55 50 thru 1n5554 series. ? voidless hermetically sealed glass package. ? extremely robust construction. ? quadruple - layer passivation. ? internal category 1 metallurgical bonds. ? jan, jantx, jantxv and jans qu alified versions available per mil - prf - 19500/420. ? rohs compliant versions available (commercial grade only) . applications / benefits ? standard recovery 5 a mp 200 to 1000 volts rectifier series. ? military and other high - reliability applications. ? general rectifier applications including bridges, half - bridges, catch diodes, etc. ? high forward surge current capability. ? low thermal resistance. ? controlled avalanche with peak reverse power capability. ? extremely robust construction. ? inherently radiation hard as described in microsemi micronote 050 . m axim um ratings @ t a = 25 o c unless otherwise noted. msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 -1 158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg - 65 to + 175 o c thermal resistance junction - to - lead (1) r ? jl 22 o c /w thermal impedance @ 10 ms heating time z ? jx 1.5 o c /w maximum forward surge current (8.3 ms half sine) i fsm 100 a average rectified forward current (1) @ t l = 30 o c i o (l) 5 a average rectified forward current (3) @ t a = 55 o c @ t a = 100 o c i o 2 (2 ) i o3 (4) 3 2 a a working peak reverse voltage 1n55 50 1n55 51 1n55 52 1n55 53 1n55 54 v rw m 200 400 600 800 1000 v solder temperature @ 10 s t sp 260 o c see notes on next page. downloaded from: http:///
t4 - lds - 0230, rev . 1 (111 901 ) ?2011 microsemi corporation page 2 of 6 1n5550 thru 1n5554 m axim um rating s notes : 1. at .375 i nc h ( 9.52 mm) lead length from body. 2. derate linearly at 22.2 ma/oc from + 55 oc to +100 o c. 3. these i o ratings are for a thermally (pc boards or other) mounting methods where the lead o r end - cap temperatures cannot be maintained and where thermal resistance from mounting point to ambient is still sufficiently controlled where t j ( ma x) does not exceed 175 o c. this equates to r jx 47 oc/w. 4. derate linearly at 26.7 ma/c above t a = +100 c to +175 c ambient. mechanical and packaging ? case: hermetically sealed voidless hard gla ss with t ungsten slugs . ? terminals: axial - leads are t in/ l ead (sn/pb) over c opper. rohs compliant matte -t in is available for commercial only. ? marking: body paint and part number . ? polarity: cathode band . ? tape & ree l option: standard per eia - 296. consult factory for quantities. ? weight: 750 m illigrams . ? see p ackage d imensions on last page. part nomenclature jan 1n5550 (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level jan s = jans level blank = c ommercial jedec type number see electrical characteristics t able rohs compliance e3 = rohs c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant symbols & defini tions symbol definition v br minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current . v rwm working peak reverse voltage: the maximum peak voltage that can be applied over the operating temperature range excluding all transient voltages (ref jesd282 - b). i o average rectified output current: the output current averaged over a full cycle with a 50 hz or 60 hz si ne - wave input and a 180 degree conduction angle. v f maximum forward voltage: the maximum forward voltage the device will exhibit at a specified cur rent. i r maximum reverse current: the maximum reverse (leakage) current that will flow at the sp ecified voltage and temperature. t rr reverse recovery time: the time interval between the instant the current passes through zero when changing f rom the forward direction to the reverse direction and a specified decay point after a peak reverse current occur s. downloaded from: http:///
t4 - lds - 0230, rev . 1 (111 901 ) ?2011 microsemi corporation page 3 of 6 1n5550 thru 1n5554 electrical characteristics @ t a = 25 o c unless otherwise noted. type minimum breakdown voltage v br i r @ 50 a volts forward voltage v f @ i f = 9 a (pk) maximum reverse current i r @ v rwm a reverse recovery t rr (note 1) s min. volts max . volts 1n5550 220 0.6 v (pk) 1.2 v (pk) 1.0 2.0 1n5551 440 0.6 v (pk) 1.2 v (pk) 1.0 2.0 1n5552 660 0.6 v (pk) 1.2 v (pk) 1.0 2.0 1n5553 880 0.6 v (pk) 1.3 v (pk) 1.0 2.0 1n5554 1100 0.6 v (pk) 1.3 v (pk) 1.0 2.0 note 1: i f = 0.5 a, i rm = 1.0 a, i r(rec) = .250 a. downloaded from: http:///
t4 - lds - 0230, rev . 1 (111 901 ) ?2011 microsemi corporation page 4 of 6 1n5550 thru 1n5554 graphs t h heating time (seconds) figure 1 maximum thermal impedance l ead t empe rature t l ( o c) figure 2 m aximum current vs. l ead t emperature notes: 1. dimensions are in inches. 2. metric equivalents (to the nearest .01 mm) are given for general information only and are based upon 1 inch = 25.4 mm. a verage rectified current in (a mps ) z ? jx ( o c/watt) downloaded from: http:///
t4 - lds - 0230, rev . 1 (111 901 ) ?2011 microsemi corporation page 5 of 6 1n5550 thru 1n5554 graphs (continued) v f C f orward v oltage (v) figure 3 typical forward voltage vs. forward current i f C f orward current (a) downloaded from: http:///
t4 - lds - 0230, rev . 1 (111 901 ) ?2011 microsemi corporation page 6 of 6 1n5550 thru 1n5554 package dimensions l tr d ime n si ons not es i nc h m illime ters min max min max bd 0. 115 0. 180 2. 92 4. 57 3, 4 bl 0. 130 0. 300 3. 30 7. 62 4 ld 0. 036 0. 042 0. 92 1. 07 ll 0. 900 1. 300 22 . 86 33 . 02 not es: 1 . d ime n si ons a re in inch es . 2 . m illime ter equi va len ts are gi ven fo r g ene ral infor ma tion o nl y. 3 . the bl di men sio n sh al l in cl ud e the en tire body in clu d in g s lu g s and s ec t io ns of the le ad ov er w hic h the di a me ter is un con t ro lled . t hi s u nc on tr ol le d area is de fined as the z on e be tw een the edge of the di od e bod y and ext endin g . 05 0 inch (1.27 mm ) on to the le ad s. 4 . d ime n si on bd s ha ll be me as ured at the la rgest di a me ter. 5 . in ac co rdance wi th as me y 14 .5m, diame ters are eq ui v al ent to x sy mbolog y. downloaded from: http:///
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